Fabrication of Non-volatile Charge Storage Memory Device by Novel doped ZnO nanoparticles with 4.79 eV bandgap. SOUDIP SINHA ROY Theoretical Physicist Quantumorbit Synthesis Pvt. Ltd., India soudipsinharoy@(gmail.com, physicist.net) Fabrication of Non-volatile Charge Storage Memory Device by Novel doped ZnO nanoparticles with 4.79 eV bandgap SOUDIP SINHA ROY Theoretical Physicist Quantumorbit Synthesis Pvt. Ltd., India soudipsinharoy@(gmail.com, physicist.net) Full text Abstract N owadays, the drastic participation of the nanosized materials in technology have been implicated with various applications which mainly aims the performance optimization, dimensional downscaling , ultra-low power consumption etc. to overcome the fundamental limits of the microscale devices. It is the requisite stage to familiarize a convenient alternative of the traditional large-scale technologies in the purpose of accelerating the flow of the applied science for mankind. This article presents two novel non-volatile device structures which are fabricated by layer by a layer deposition method. I-V measurements for both the samples justify the device characteristic as p-type –insulator–n-type configuration. The measurements confirm that the successful fabrication of those devices and proves the high-density charge capacity with an improved lifetime of the carriers compared to erstwhile reports. The measured the threshold voltage for this device is 0.939V. Diode characteristic of the fabricated device Keys: Zinc oxide, charge storage devices, quantum physics, nanotechnology 1. Introduction To unfold the hidden mysteries of the molecules and their applications the nanoscience have been presented plenty of its morphism in order to rapid performance scale up with drastic dimensional down scaling . Manipulation of the molecular information technology has numerous existing approaches for instance molecular non-volatile memory , electron spin devices, nano- memorister , quantum dot island based devices, capacitive devices etc. which have proven their superior activities in binary logic and storage device applications. Nowadays, the utility of the hard storage has become quite crucial and instantaneous which claims to be tinier and fastest to meet the present requirements of the mankind . The fabrication of the non-volatile charge storage devices opens a convenient way with millions charge storing capacity in a few nanometer areas . In this letter the ZnO nanoparticle-based non-volatile memory device has reported which provides a better optimization to the device efficiency. To fabricate this device three major materials have involved those are PMMA, Ag NPs, ZnO NPs. In another type of the device is fabricated by using Nafion which exhibits a benchmarking of the p- i-n diode. The PMMA layer is used as the tunneling barrier for the electrons that provides a path to the electrons to be tunnelled during the biasing application but resistance during cutoff state. It also acts as the high impedance to the electrons during cutoff state that resists from the discharging by defending the reverse tunnelling . To fabricate this device the ZnO and Ag doped ZnO NPs are utilized and specifically sputtered on the surface of the ITO. Two different types of devices have been walked through firstly ITO/PMMA/Nafion has been examined and next is ITO/PMMA /ZnO-NPs doped with Ag NPs. The reduced bandgap of the doped ZnO layer works as the electron hopping state and allows to operate it at ultra-low power input. 2. Background of Non-volatile Memory Devices Since the last twenty years of the 19th century, the advancement of the nanotechnology has bequeathed a lot of novel applications to the current technology to accelerate its current flow over its fundamental limits. The molecular technology has eliminated various complications in the device fabrication and operation for instance impurity inconsistency, thermal carrier diffusion, elevated outlay of photolithography etc. which genuinely overcomes the unwanted faults in circuit and strictly shrinks the number of superposition states. In the recently published article it is reported that [1,2] the tunneling current depends on the barrier resistivity which tunneling get violated dynamically due to the operating temperature variation. Therefore, the temperature stability is also a key point which rights to be high to opt the ultimate device performance. The synthesis of the non-volatile memory devices through the molecular thin film technology has already been taken care of before a couple of years. The floating gate MOS devices also acceptable performances in charge storing but those have the less storage density and lower speed of operation. The involvement of the nanoparticles induce a high surface area with the wide bandgap that imposes to store high density data and optimized operating speed with ultralow power consumption and minute faults.exhibits between the ITO and the Ag NPs layer. Another report communicates that the structure ITO/a-C/ZnO/a-C/Al contact also exhibits very high optimization in switching rate and the charge storage capability where two a-C has incorporated which acts ITO/PMMA/Ag NPs based device has already been reported previously which exhibits superior performance adaptability [2]. The ON/OFF ratio (switching rate) has also improved drastically due to the incorporation of the PMMA layer as a typical insulator [1]. 3. Preparation of respective nanoparticles The following nanoparticles are used in the device fabrication process. The process of synthesis of that nanomaterial is very easy, cheaper and time efficient. The involved chemicals have easy commercial availability. The list of chemicals is as follows. Sodium Borohydrate (NaBH4); AgNO3; PVP; Zinc Acetate-dihydrate (Zn(COOCH3)2.2H2O); Isopropyl Alcohol (CH3CH2CH2OH); Ethanolamine (C2H7NO). 3.1. ZnO NP preperation method As a precursor commercially available Zinc Acetate-dihydrate (Zn(COOCH3)2.2H2O) salt was used and dissolved into Isopropyl Alcohol ( CH3 CH2 CH2 OH ) having molar mass 60.09 g/mol. The final obtained solution was 0.5M. Afterwards, the solution was put in stirring and the Ethanolamine (C2H7NO) was added drop-wise during stirring at constant 80 C temperature until the gel is formed. After obtaining the gel the sample was dried at 35C until the solvent is completely evaporated out. However, the organic solvent evaporates faster in rate even at room temperature. 3.2. Ag NP preparation method With the 60ml of distill water, the 0.004M NaBH4 was dissolved and kept for 30 min at continuous stirring in an ice bath. During stirring gently add 4ml of 0.002M AgNO3 dropwise until the colour of the solution is converted into light yellow. Once the desired colour is achieved 0.3% PVP as the capping agent was gently added. Afterwards, store the prepared solution immediately in dark space to avoid the particle agglomeration. 3.3. Ag-doped ZnO nanopowder preperation method As a precursor commercially available Zinc Acetate-dihydrate (Zn(COOCH3)2.2H2O) salt was used and dissolved into Isopropyl Alcohol ( CH3 CH2 CH2 OH ) having molar mass 60.09 g/mol. The final obtained solution was 0.5M. Afterwards, the solution was put in stirring and the Ethanolamine (C2H7 NO) was added drop-wise during stirring at constant 80 C temperature until the gel is formed. After the ZnO gel formation, the 5% concentric AgNO3 was added dropwise while stirring at 6000 rpm inside an ice bath. Once the doping is successful then by centrifuging the sample and washing by MEA several times bright white coloured Ag-doped ZnO nanopowder was obtained. Figure 1 | (a) UV-vis measurement for the pure ZnO NPs (50nm), (b) Zoomed view for further clarification As the UV visible optical bandgap approximation asserts that B.G.= 1240/lamda eV. Therefore, the calculate B.G. of this above ZnO sample is given by 1240/258.40= 4.79 eV. The bandgap for a pure ZnO nanoparticle is at around ~3.2eV which response to 380nm UV wavelength. But in this case the bandgap is found with an unexpected increment which responded at 258.40 nm UV wavelength. In the next context this reason will be revealed out. Research is going on, on this topic. 4. Device Fabrication The fabrication is the ultimate step for providing a physical aspect to any theoretical substance. In this case, two different types of devices have been fabricated fig. 2 is the ITO/PMMA/ZnO NPs based device. This device operates with the basic fundamental process of the charge trapping and hopping states. But the second device fig. 3 operates with the reduced bandgap of the ZnO through Ag doping and results in the ultra-low power operating with optimized ON/OFF ratio. 4.1. ITO/PMMA/Naffion structured device The chemical formula of the nafion is C7HF13O5SC2F4·. Initially, the ITO was repeatedly cleaned by the concentric ethanol and the acetone in the ultrasonicator then it was dried at an hour at room temperature. After that, the ITO was exposed to the PMMA by a suitable spin coater and kept for 24 hrs. at room temperature for drying purpose. The grown thickness in 40nm. Once the drying is completed then highly purified nafion was drop casted onto the dried PMMA surface of the ITO and dried for 24 hrs. at room temperature. Figure 2 | ITO/PMMA/Nafion structured device 4.2. ITO/PMMA/Ag-doped ZnO device The fabrication process Initially, the ITO was repeatedly cleaned by the concentric ethanol and the acetone in the ultrasonicator then it was dried at an hour at room temperature. After that, the ITO was exposed to the PMMA and kept for 24 hrs. at room temp. for drying purpose. Once the drying is completed then the pre-synthesized Ag-doped ZnO nanopowder was diluted into the 2 propanols and was sputtered onto the dried PMMA surface of the ITO and 100 nm thicker thin film was produced. After that, the sample was kept at vacuum for 48 hrs in special purpose. Figure 3 | ITO/PMMA/Ag NPs/Ag-doped ZnO structured device 5. Performance Justification Through I-V and C-V Measurement 5.1. I-V measurement of the naffion based device. I-V measurement is the technique which allows to investigate the current verses voltage mapping for any multipolar device. In this case both the fabricated devices are the bipolar systems those are verified through I-V measurements. Figure 4| I-V measurement curve for the ITO/PMMA/Nafion based device From above graph figure 4, it is well visible that the curve is similar to the semiconductor diode where the electrons forward current is 2.39889e-9 A. The current is high compared to the previously reported devices [2]. This high current stands for the high probability of the electrons to be found in the conduction band of the Nafion. Once the electrons are subjected to the electromotive field then gradually those try to overcome the PMMA barrier interface (thickness 250nm) and after a certain voltage, the tunneling phenomena of the electrons are observed which is clear from the fig. 3. Within the potential range of 0.831V to 0.939V there has a transition of the electron which gives a small valley peak that satisfies the electron tunneling effect through the thin PMMA film. The upper valley provides 1.422e-9 A current which instantly falls down at 1.4444e-10 A. From 0.939V this device exhibits the standard diode characteristics. Therefore, the threshold voltage for this device is 0.939V. The measurement from -2V to +2V assures that this diode characteristic is well justified and meet with the standard semiconductor devices. 5.2. C-V measurement of the Nafion based device Cyclic voltammetry measurement for the nafion based sample. Keeping K+ ions in the solution the CV measurement was performed. Figure 5| I-V measurement curve for the ITO/PMMA/Nafion based device with the I-V four-probe measurement system Figure 6| C-V measurement curve for the ITO/PMMA/Nafion based device According to the C-V analysis if the device is fully reversible then obviously ipa/ipc should be equal to 1. But in this case this ration deviates from one by the factor of 4.3170. The anodic current IPA is 0.000351429A and the cathodic current is 0.00151714A. In case of forward cycle, the current is comparatively high to the reverse cycle. Therefore, it is identified that this device is having a non-volatility nature. This non-volatile nature is in form of charge shoring capacity. The specified interval between two cycles forward and reverse is 2sec. 5.3. I-V measurement of the Ag-doped ZnO based device. Figure 7| I-V measurement curve for the ITO/PMMA/Ag-doped ZnO NPs based device From this measurement curve figure 7, it is seen that that curve is following the standard p- i-n characteristics. The incorporation of the intermediate insulating layer differs the device from the general p-n diode semiconductors where the p-type and the n-type semiconductors are attached and separated by the self-induced insulating layer called the depletion layer. But when this depletion layer is mask fabricated then the device characteristics changes to the p- i-n characteristics where the electron tunneling takes place through the insulating layer. Depending on the thickness of the tunneling barrier tunneling current varies and gives a search tunneling current which typically provides an oscillation as shown in figure 8. According to the measurement curve , the maximum stable current output is obtained at 3.984V is 3.2e-5 A. The measured threshold voltage for this device is 0.339V. The full frame of the graph is shown below, where the highlighted part of the graph is having a noise like phenomena which is mostly caused by the unwanted and uncontrolled electron tunneling within the applied potential range, figure 8. Figure 8| Complete curve of I-V measurement curve for the ITO/PMMA/Ag-doped ZnO NPs based device. 6. Conclusion This work is performed for fabricating the non-volatile devices based on ZnO and metal-doped ZnO nanoparticles. In collaboration with the four probe I-V characteristics measurement, the devices have proven that both are having a non-volatile nature and the those are having very less threshold voltage which can trigger device at very low power. The improvement in the charge storage capacity is notable in both the devices. The unexpected bandgap for the ZnO is being verified through several observations and experiments. In the future articles, this may come across. References [1] Fushan Li, et.al. , "Nonvolatile Memory Effects of ZnO Nanoparticles Embedded in an Amorphous Carbon Layer", Japanese Journal of Applied Physics 49 (2010) 070209. [2] Biswanath Mukherjee and Moumita Mukherjee, "Nonvolatile memory device based on Ag nanoparticle: Characteristics improvement" Applied Physics Letters 94, 173510 (2009); doi : 10.1063/1.3127233. [3] V. L. Covin, M. C. Schlamp, and A. P. Alivisatos: Nature (London) 370 (1994) 354. [4] T. Homma, T. Kutsuzawa, K. Kunimune, and Y. Murao: Thin Solid Films 235 (1993) 80. [5] M. Horie: J. Vac. Sci. Technol. A 3 (1995) 2490. [6] S. Mizuno, A. Verma, H. Tran, P. Lee, and B. Nguyen: Thin Solid Films 283 (1996) 30. [7] H. J. Ko, K. M. Lee, H. J. Lee, and C. K. Choi: Thin Solid Films 506–507 (2006) 8 . [8] Z. J. Donhauser, B. A. Mantooth, K. F. Kelly, L. A. Bumm, J. D. Monnell, J. J. Stapleton, Jr., D. W. Price, A. M. Rawlett , D. L. Allara, J. M. Tour, and P. S. Weiss, Science 292, 2303 2001 .

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Debarka Mukhopadhyay Editor of Physics Tomorrow Letters || Rich and dynamic experience of more than twelve years after post graduation and currently associated with the Department of Computer Science & Engineering, School of Engineering and Technology, Adamas University of Technology, West Bengal. Dr. Debarka Mukhopadhyay Specialist researcher of Quantum dot Cellular Automata debarka.mukhopadhyay@gmail.com Overview. Rich and dynamic experience of more than twelve years after post graduation and currently associated with the Department of Computer Science & Engineering, School of Engineering and Technology, Adamas University, Kolkata as Associate Professor. Enthusiastic and result oriented individual with PhD in Computer Science & Engineering from the Maulana Abul Kalam Azad University of Technology, West Bengal and M.Tech in Computer Science and Engineering from Kalyani Govt Engineering College under the West Bengal University of Technology. Educational Background 2013- 2017 | Doctorate of Philosophy(Ph.D.), Computer Science & Engineering, Maulana Abul Kalam Azad University of Technology, West Bengal, formarly West Bengal University of Technology. 2005–2007 | Master of Technology(M.Tech), Computer Science & Engineering, Kalyani Government Engineering College, Under West Bengal University of Technology. 2005 | Graduate Aptitude Test In Engineering(GATE). December 1996 | Bachelor of Engineering, Electronics & Telecommunication Engineering. December 2003 | I.E.T.E (New Delhi) (AICTE and MHRD approved and recognized by AIU), I.E.T.E is notified as Scientific and Industrial Research Organization (SIRO) and an educational Institution of national eminence by Govt of India. 1993 | Higher Secondary(12th), WBCHSE, Percentage – 70.3. 1990 | Madhyamik(10th), WBBHSE, Percentage – 65. Doctorate Thesis Study on Quantum-Dot Cellular Automata Based Circuit Design, Testing and Analysis. Description | The thesis deals with methodologies of regulating the clock signal to achieve minimum wastage of energy while executing Quantum-Dot Cellular Automata (QCA) architectures. During the past few years, enormous efforts have been devoted by the research community worldwide towards studying so many energy-related issues. In spite of tremendous efforts by the researchers, findings of efficient clocking model and relevant energy parameters were unexplored. This work includes findings of formalism for the system energy which combines kinetic and potential Energy. Another formalism determines the minimum energy to overcome the tunnel barrier. Few remarkable observations have been made, Dissipated Energy Frequency is observed to be directly proportional to the number of cells N in the architecture and (n2 − 1), where n stands for Electron Quantum Number. Incident Energy Frequency is directly proportional to the number of cells N in the architecture and to the quadratic function of Electron Quantum Number n and Intermediate Electron Quantum Number n2, i.e., (n2− n22). Relaxation Time τ is inversely proportional to the product of N and (n2−1). Incident Time is inversely proportional to the number of cells and to the quadratic function of n and n2. Dissipation Time is inversely proportional to the number of cells in the architecture and quadratic function of n. Switching Time is inversely proportional to the number of cells and to the quadratic function of Electron Quantum Number n and Intermediate Electron Quantum Number n2. Propagation Time is the Switching Time of the first clock zone added with Relaxation Time of remaining zones. Differential Frequency is directly proportional to the product of N and (n2− 1). It has also been observed that even if Es ≥ 2NEc, there is a strictly positive probability of reflection of electrons from the energy barrier. Here Es is System Energy and Ec is barrier energy. On the contrary, if Es ≥ 2NEc, there is a strictly positive probability of transmission through the energy barrier. All the findings are extensively studied and analyses are reported with various reversible and non reversible circuit units in various chapters. Masters Thesis Quantum Circuit Synthesis and Optimization Applying Genetic Algorithm. Supervisors | Professor Paramartha Dutta, Kalyani Govt. Engineering College (then) & [Details unavailable ] Professor Amlan Chakraborti, Calcutta University. [Details unavailable ] Description | Description Quantum computing has initiated the design of systems based on quantum logic gates. The complex quantum circuit is designed using the basic quantum gates. In this study, we have applied a genetic algorithm (GA) to optimize the quantum circuits. Our goal is to perform automatic quantum circuit synthesis for a given functional description. We employ simulation in order to determine the final quantum state. Here the GA should employ the variable crossover and mutation point which is different from the previously published methods. Experience 1st Dec 2018– Present | Associate Professor in the Department of Computer science & Engineering, Adamas University, Kolkata. Extensive Research and Teaching 2nd May 2018–Nov 2018 | Associate Professor in the Department of Computer science & Engineering and Dean(Incharge) Research, Durgapur Institute of Advanced Technology and Management, Durgapur, Rahul Foundation. Extensive Research and Teaching 2nd September 2015– 30th April 2018 | Assistant Professor, Department of Computer science & Engineering and Information Technology, Amity School of Engineering and Technology, Amity University Kolkata. Responsible for assisting in the educational and social development of pupils under the direction and guidance of the Director. Organising classes and responding to the strengths and needs of students during lessons. Duties: { Appointed as Coordinator of Board of Studies with the Amity Institute of Information Technology, Amity University, Kolkata. 6th July 2010–1st September 2015 | Assistant Professor, Department of Computer science and Engineering, Bengal Institute of Technology and Manage- meant, Santiniketan, Under the West Bengal University of Technology, Approved by AICTE. Responsible for assisting in the educational and social development of pupils under the direction and guidance of the Director. Organising classes and responding to the strengths and needs of students during lessons. Duties: Planning & delivering well-structured lessons which engage & motivate students. Planning and organising visits, field studies and special activities connected with the teaching of the subject. Supporting the department in delivering the curriculum effectively. Managing resources effectively. Organising and supporting a range of extra-curricular activities. 26th May 2007 – Senior Faculty(Corporate Trainer), apl Ltd, Noida, Uttar Pradesh. 5st July 2010 Dynamic, trainer offering a solid history of increasing corporate revenue, enhancing client effectiveness and establishing loyal customer relations through training program design and delivery. Duties: Proving training and consultation for corporate clients. Developing and customizing training contents as per the client requirements. Training using relevant training material. Instructing the client on various areas such as soft skills training, employee development customer service etc. Attending meeting with clients and corporates. Sponsored Projects On design of an ultra low power water purification system using Molecular Quantum Dot Cellular Automata based nanotechnology. Principal Investigator | Dr. Paramartha Dutta CO-Principal Investigator | Dr. Debarka Mukhopadhyay Funding Agency | Dubai Future Foundation, The United Arab Emirates Project Scheme | MBR Space Settlement Challenge Grant amount | 60 000 AED Status | Submitted and under processing Patents 1. A Portable X-Ray System Based on the Molecular Quantum Dot Cellular Automata (QCA) Name of Inventors | Prof(Dr) Sudipta Roy, Assam University, Prof.(Dr) Paramartha Dutta, Visva- Bharati University, Dr. Debarka Mukhopadhyay, Amity University, Kolkata, Siddhartha Bhattacharyya Name of applicant | Triguna Sen School of Technology (TSSOT), Assam University, Silchar Pub. No | WO2018065828; 12/04/2018 PCT Number & date | PCT/IB2017/050329; 23/01/2017 2. Quantum Dot Cellular Automata based Food Irradiation System and Method of its working Name of Inventors | Prof(Dr) Sudipta Roy, Assam University, Prof.(Dr) Paramartha Dutta, VisvaBharati University, Dr. Debarka Mukhopadhyay, Amity University, Kolkata, Ms. Mili Ghosh, Visva-Bharati University, Santiniketan. Name of applicant | Triguna Sen School of Technology (TSSOT), Assam University, Silchar Pub. No | WO/2018/122622 and Date: 05.07.2018 PCT Number & date | PCT/IB2017/050660; 08/02/2017 3. Quantum Dot Cellular Automata based Portable Cancer Cell Demolition System and Method of its operation thereof Name of Inventors | Prof(Dr) Sudipta Roy, Assam University, Prof.(Dr) Paramartha Dutta, VisvaBharati University, Dr. Debarka Mukhopadhyay, Amity University, Kolkata, Ms. Sunanda Mondal, Visva-Bharati University, Santiniketan. Name of applicant | Triguna Sen School of Technology (TSSOT), Assam University, Silchar Pub. No | WO/2018/100438; 07.06.2018 PCT Number & date | PCT/IB2017/050622; 04/02/2017 4. Quantum Dot Cellular Automata based Radiation Knife for Radiosurgery and Method of its working Name of Inventors | Prof(Dr) Sudipta Roy, Assam University, Prof.(Dr) Paramartha Dutta, Visva- Bharati University, Dr. Debarka Mukhopadhyay, Amity University, Kolkata, Mrs. Kakali Datta, Visva-Bharati University, Santiniketan . Name of applicant | Triguna Sen School of Technology (TSSOT), Assam University, Silchar Pub. No | WO/2018/122624; 05.07.2018 PCT Number & date | PCT/IB2017/051596; 20/03/2017 5. Quantum Dot Cellular Automata based Portable Industrial Radiography System Name of Inventors | Prof(Dr) Sudipta Roy, Assam University, Prof.(Dr) Paramartha Dutta, Visva- Bharati University, Dr. Debarka Mukhopadhyay, Amity University, Kolkata Triguna Sen School of Technology (TSSOT), Assam University, Silchar . Name of applicant | Triguna Sen School of Technology (TSSOT), Assam University, Silchar Pub. No | WO/2018/127742; 12.07.2018 PCT Number & date | PCT/IB2017/051624; 21/03/2017 6. AN iot SYSTEM AND METHOD FOR SHORTEST PATH ESTI- MATION/PLANNING FOR CONNECTED AUTONOMOUS MOBILE BODIES Name of Inventors | Mr. Tanmoy Chakraborti, Adamas University, Kolkata, Mr. Anirban Das, Adamas University, Kolkata, Dr. Debarka Mukhopadhyay, Adamas University, Kolkata. . Name of applicant | Adamas University, Kolkata IPO Number & Filing date | 201931015585; 18/04/2019 7. A Molecular QCA based Bug Zapper System Name of Inventors | Prof.(Dr) Paramartha Dutta, Visva-Bharati University, Dr. Debarka Mukhopadhyay, Amity University, Kolkata, Prof(Dr) Siddhartha Bhattacharyya, Principal, RCCIIT, Kolkata . Name of applicant | Debarka Mukhopadhyay IPO Number & Filing date | 201731011403; 30/03/2017 8. A Molecular QCA based Ultraviolet ray generating unit for light Therapy Name of Inventors | Prof.(Dr) Paramartha Dutta,Visva-Bharati University, Dr. Debarka Mukhopadhyay, Amity University, Kolkata, Prof(Dr) Siddhartha Bhattacharyya, Principal, RCCIIT, Kolkata . Name of applicant | Debarka Mukhopadhyay IPO Number & Filing date | 201731011398; 30/03/2017 9. A Molecular QCA based CT Scan System Name of Inventors | Prof.(Dr) Paramartha Dutta,Visva-Bharati University, Dr. Debarka Mukhopadhyay, Amity University, Kolkata, Prof(Dr) Siddhartha Bhattacharyya, Principal, RCCIIT, Kolkata, Dr. Paritosh Bhattacharya, NIT, Agartala . Name of applicant | Debarka Mukhopadhyay IPO Number & Filing date | 201731011402; 30/03/2017 10. A Molecular QCA based UV lamp for Water purification Name of Inventors | Prof.(Dr) Paramartha Dutta,Visva-Bharati University, Dr. Debarka Mukhopadhyay, Amity University, Kolkata, Prof(Dr) Siddhartha Bhattacharyya, Principal, RCCIIT, Kolkata . Name of applicant | Debarka Mukhopadhyay IPO Number & Filing date | 201731011405; 30/03/2017 11. A PORTABLE MOLECULAR QUANTUM DOT CELLULAR AUTOMATA X-RAY SYSTEM AND METHOD OF ITS OPERATION THEREOF Name of Inventors | Prof(Dr) Sudipta Roy, Assam University, Prof.(Dr) Paramartha Dutta,Visva- Bharati University, Dr. Debarka Mukhopadhyay, Amity University, Kolkata, Prof(Dr) Siddhartha Bhattacharyya, Principal, RCCIIT, Kolkata . Name of applicant | Debarka Mukhopadhyay IPO Number & Filing date | 201731011405; 30/03/2017 12. QUANTUM DOT CELLULAR AUTOMATA BASED PORTABLE FOOD IRRADIATION SYSTEM AND METHOD OF ITS WORKING Name of Inventors | Prof(Dr) Sudipta Roy, Assam University, Prof.(Dr) Paramartha Dutta,VisvaBharati University, Dr. Debarka Mukhopadhyay, Amity University, Kolkata, Ms. Mili Ghosh, Visva-Bharati University, Santiniketan . Name of applicant | Debarka Mukhopadhyay IPO Number & Filing date | IN201731011405; 07/04/2017 13. QUANTUM DOT CELLULAR AUTOMATA BASED PORTABLE CANCER CELL DEMOLITION SYSTEM AND METHOD OF ITS OPERATION THEREOF Name of Inventors | Prof(Dr) Sudipta Roy, Assam University, Prof.(Dr) Paramartha Dutta,VisvaBharati University, Dr. Debarka Mukhopadhyay, Amity University, Kolkata, Ms. Sunanda Mondal, Visva-Bharati University, Santiniketan . Name of applicant | Debarka Mukhopadhyay IPO Number & Filing date | IN201631041316; 07/04/2017 14. QUANTUM DOT CELLULAR AUTOMATA BASED RADIATION KNIFE FOR RADIOSURGERY AND METHOD OF ITS WORKING Name of Inventors | Prof(Dr) Sudipta Roy, Assam University, Prof.(Dr) Paramartha Dutta,Visva- Bharati University, Dr. Debarka Mukhopadhyay, Amity University, Kolkata, Mrs, Kakali Datta, Visva-Bharati University, Santiniketan . Name of applicant | Debarka Mukhopadhyay IPO Number & Filing date | IN201631045061; 07/04/2017 15. QUANTUM DOT CELLULAR AUTOMATA BASED PORTABLE IN- DUSTRIAL RADIOGRAPHY SYSTEM Name of Inventors | Prof(Dr) Sudipta Roy, Assam University, Prof.(Dr) Paramartha Dutta,Visva- Bharati University, Dr. Debarka Mukhopadhyay, Amity University, Kolkata . Name of applicant | Debarka Mukhopadhyay IPO Number & Filing date | IN201731000500; 07/04/2017 Reviewer Reviewer of ACM Journal of Emerging Technologies and Computing System. Reviewer of Microelectronics Journal. List of M.Tech Project Supervised Design and Analysis of Quantum-Dot Cellular Automata Flip-Flops – A nano-technology approach in 2013. Design and Analysis of Quantum-Dot Cellular Automata 4 : 1 Multiplexer in 2014. Publications International and National Conference Publications Mili Ghosh, Debarka Mukhopadhyay, Paramartha Dutta, "A 2 Dot 1 Electron Quantum Cellular Automata based Parallel Memory", Vol 339, pp.627-636, Advances in Intelligent Systems and Computing, Springer India, INDIA 2015. Paramartha Dutta, Debarka Mukhopadhyay, “New Architecture for Flip Flops using Quantum-Dot Cellular Automata” Proceedings of the 48th Annual Convention of Computer Society of India, Vol II, Springer, pp 707-714, 2013. Debarka Mukhopadhyay, Amalendu Si,“Quantum Circuit Synthesis and Optimization Applying Genetic Algorithm",National Conference on Computing and Systems 2010, Department of Computer Sc. Burdwan University, WB, pp 80-85, 2010. K. Datta, D. Mukhopadhyay, P. Dutta, “ Design of n-to-2n Decoder using 2- Dimensional 2-Dot 1-Electron Quantum Cellular Automata”,National Conference on Computing, Communication and Information Processing, Excellent Publishing House, pp. 7791 (2015). S. Mondal, D. Mukhopadhyay, P. Dutta “A Novel Design of a Logically Reversible Half Adder using 4-Dot 2-Electron QCA”,National Conference on Computing, Communication and Information Processing, Excellent Publishing House, 2015, pp. 123-130, (2015). Mili Ghosh, Debarka Mukhopadhyay, Paramartha Dutta, “2 Dimensional 2 Dot 1 Electron Quantum Cellular Automata Based Dynamic Memory Design", Advances in Intelligent Systems and Computing (AISC), Springer, (2015). Mili Ghosh, Debarka Mukhopadhyay, Paramartha Dutta, “A Novel Parallel Memory Design using 2 Dot 1 Electron QCA”, IEEE 2nd International Conference on Recent Trends in Information Systems, PP. 485- 490 (2015). Kakali Datta, Debarka Mukhopadhyay, Paramartha Dutta, “Design of a Logically Reversible Half Adder using 2D 2-Dot 1-Electron QCA", Advances in Intelligent Systems and Computing (AISC),Springer, (2015). Kakali Datta, Debarka Mukhopadhyay, Paramartha Dutta, “Design of a 2-Dot 1-Electron QCA Full Adder using Logically Reversible Half Adders", IEEE ISACC 2015 (2015). Mili Ghosh, Debarka Mukhopadhyay, Paramartha Dutta,“Design and Analysis of two dot one electron QCA ExOR Gate in Logically Reversible Gate Design", IEEE International Symposium on Advanced Computing and Communication (ISACC) 2015, Assam University, Silchar, India, pp. 275-280. Kakali Datta, Debarka Mukhopadhyay, Paramartha Dutta, “Design of a binary to BCD conveter using 2D 2-Dot 1-Electron Quantum Dot Cellular Automata", Procedia Computer Science, pages 153-159, vol: 70, Elsevier, (2015). Mili Ghosh, Debarka Mukhopadhyay, Paramartha Dutta, “2-Dimensional 2-Dot 1-Electron Quantum Cellular Automata-Based Dynamic Memory Design",Proceedings of the 4th International Conference on Frontiers in Intelligent Computing: Theory and Applications (FICTA), pages 357-365, vol: 404, Springer India, (2015). Kakali Datta, Debarka Mukhopadhyay, Paramartha Dutta, “Design of a Logically Reversible Half Adder Using 2D 2-Dot 1-Electron QCA",Proceedings of the 4th International Conference on Frontiers in Intelligent Computing: Theory and Applications (FICTA), pages 379-389, vol: 404, Springer India, (2015). Sunanda Mondal, Debarka Mukhopadhyay, Paramartha Dutta, “A Design Of a 4 Dot 2 Electron QCA Full Adder using Two Reversible Half Adders”, vol 458.Springer, Singapore, pp 327-335 (2017). Mili Ghosh, Debarka Mukhopadhyay, Paramartha Dutta, “A 2D 2 Dot 1 Electron Quantum Dot Cellular Automata Based Logically Reversible 2:1 Multiplexer”, IEEE International Conference on Research in Computational Intelligence and Communication Networks (ICRCICN), pp. 300- 305, ( 2015). Kakali Datta, Debarka Mukhopadhyay, Paramartha Dutta, “Design of Ripple Carry Adder using 2-Dimensional 2-Dot 1-Electron Quantum-Dot Cellular Automata”, Springer India, INDIA -2016, Vol: 1, PP: 263-270, (2016). Kakali Datta, Debarka Mukhopadhyay, Paramartha Dutta, “Two-dot One-electron QCA Design of Parity Generator and Checker”, 3rd International Conference on Microelectronics, Circuits and Systems, Micro 2016 (Accepted). Kakali Datta, Debarka Mukhopadhyay, Paramartha Dutta, “Design of a BCD Adder using 2-Dimensional Two-Dot One-Electron Quantum Dot Cellular Automata”, 1st International Conference on Intelligent Computing and Communication, Springer Singapore, PP 345-354, 2017. M. Ghosh, D. Mukhopadhyay and P. Dutta, “Design of an Efficient 2-Dot 1 Electron QCA based Non-reversible Adder", in proceedings of 3rd International Conference on Microelectronic Circuit and System (Micro-2016), July 2016, PP 106-112, 2015, ISBN : 978-93-80813-45-5. Sunanda Mondal, Mili Ghosh, Kakali Datta, Debarka Mukhopadhyay and Paramartha Dutta, “A Design and Application Case Study of Binary Semaphore Using 2 Dimensional 2 Dot 1 Electron Quantum Dot Cellular Automata", in proceedings of Annual Convention of the Computer Society of India, January 2018, PP 428-448, 2018, Springer, Singapore, ISBN : 978-981-13-1342-4. Mili Ghosh, Debarka Mukhopadhyay and Paramartha Dutta, “A Study on Structural Benefits of Square Cells over Rectangular Cells in Case of 2Dot 1 Electron QCA Cells", International Conference on Computational Intelligence, Communications, and Business Analytics, March 2017, PP 85-96, 2017, Springer, Singapore, Online ISBN 978-981-10-6430-2. Journal Publications Debarka Mukhopadhyay, Paramartha Dutta.“Quantum Cellular Automata Based Novel Unit Reversible Multiplexer”,Adv. Sci. Lett. Amarican Sci. Pub.(Scopus Indexed journal) 16, 163-168 (2012). Debarka Mukhopadhyay,.Paramartha Dutta, “Quantum Cellular Automata Based Novel Unit 2:1 Multiplexer”.International Journal of Computer Applications,(UGC Listed journal) Vol 43, 2, (22-25)(2012). Debarka Mukhopadhyay, Sourav Dinda and Paramartha Dutta. “Designing and Implementation of Quantum Cellular Automata 2:1 Multiplexer Circuit". International Journal of Computer Applications,(UGC Listed Journal) Vol 25,1, (21-24), ( 2011). Debarka Mukhopadhyay, Amalendu Si, “Quantum Multiplexer Designing and Optimization applying Genetic Algorithm", International Journal of Computer Science Issues,(UGC Listed journal) Vol. 7, Issue 5, 2010. Debarka Mukhopadhyay, Paramartha Dutta, “A Study on Energy Optimized 4 Dot 2 Electron two dimensional Quantum Dot Cellular Automata Logical Reversible Flip Flops", Microelectronics Journal, Elsevier(SCI Indexed Journal), vol 46, Issue 4, pp 519-530, 2015. Arighna Sarkar, Debarka Mukhopadhyay, “Improved Quantum Dot Cellular Automata 4:1 multiplexer circuit unit", SOP Transaction on Nanotechnology, Vol. 1, No.1, May 2014. Mili Ghosh, Debarka Mukhopadhyay and Paramartha Dutta, “A Study on 2 Dimensional 2 Dot 1 Electron Quantum Dot Cellular Automata based Reversible 2:1 MUX Design: An Energy Analytical Approach”,International Journal of Computers and Applications (Scopus Indexed Journal), Pages 82-95, Volume 38, 2016, Issue 2-3, Taylor & Francis. Kakali Datta, Debarka Mukhopadhyay and Paramartha Dutta, “Design and Analysis of an Energy Efficient and Compact Two-Dimensional Two-Dot One-Electron Quantum-Dot Cellular Automata Based Ripple Carry Adder”, International Journal of Convergence Computing (Scopus Indexed Journal), Volume 2, Issue 2, 161-182, Inderscience Publishers, 2016. Kakali Datta, Debarka Mukhopadhyay and Paramartha Datta, “Comprehensive Study on the Performance Comparison of Logically Reversible and Irreversible Parity Generator and Checker Designs using Two dimensional Two -dot One-electron QCA", Microsystem Technologies (SCI Indexed Journal), Springer, Volume 23, Number 1, PP.1-9,(2017). Mili Ghosh, Debarka Mukhopadhyay and Paramartha Datta, “Design of an Arithmetic Circuit using non-reversible adders in 2-dot 1 - electron QCA", Microsystem Technologies (SCI Indexed Journal), Vol 23, Pages: 1-11, Springer, (2017). Kakali Datta, Debarka Mukhopadhyay and Paramartha Datta, “Comprehensive design and analysis of grey code counter using 2- dimensional 2-dot 1 electron QCA ", Microsystem Technologies (SCI Indexed Journal), (2018), https://doi.org/10.1007/s00542-018-3818-1. Mili Ghosh, Debarka Mukhopadhyay and Paramartha Datta, “Influence of structure of 2 Dimensional 2 Dot 1 Electron QCA cells in design of a pipelined subtractor ", Microsystem Technologies (SCI Indexed Journal),(2018) https://doi.org/10.1007/s00542-018-3826-1. Book Chapter Mili Ghosh, Debarka Mukhopadhyay, Paramartha Dutta, “2 Dimensional 2 Dot 1 Electron Quantum Cellular Automata Based Dynamic Memory Design", Advances in Intelligent Systems and Computing (AISC), Springer, (2015). Mili Ghosh, Debarka Mukhopadhyay, Paramartha Dutta, "A 2 Dot 1 Electron Quantum Cellular Automata based Parallel Memory", Vol 339, pp.627-636, Advances in Intelligent Systems and Computing, Springer India. Sunanda Mondal, Debarka Mukhopadhyay, Paramartha Dutta, “A Design Of a 4 Dot 2 Electron QCA Full Adder using Two Reversible Half Adders”, vol 458.Springer, Singapore, pp 327-335 (2017). Kakali Datta, Debarka Mukhopadhyay, Paramartha Dutta, “Design of a BCD Adder using 2Dimensional Two-Dot One-Electron Quantum Dot Cellular Automata”, Intelligent Computing and Communication, Springer Singapore, PP 345-354, 2017. Kakali Datta, Debarka Mukhopadhyay, Paramartha Dutta, “Design of a Logically Reversible Half Adder Using 2D 2-Dot 1-Electron QCA", Proceedings of the 4th International Conference on Frontiers in Intelligent Computing: Theory and Applications (FICTA), pages 379-389, vol: 404, Springer India, (2015). Kakali Datta, Debarka Mukhopadhyay, Paramartha Dutta, “Design of Ripple Carry Adder using 2-Dimensional 2-Dot 1-Electron Quantum-Dot Cellular Automata”, Springer India, INDIA -2016, Vol: 1, PP: 263-270, (2016). Paramartha Dutta, Debarka Mukhopadhyay, “New Architecture for Flip Flops using Quantum-Dot Cellular Automata” 48th Annual Convention of Computer Society of India, Vol II, Springer, pp 707-714, 2013. Memberships 2011 | MIEEE, Member of The Institute of Electrical and Electronics Engineers [IEEE] 2012 | MACM, Member of the Association of Computing Machinery. 2011 | LMIETE, Life member of the Institution of Electronics and Telecommunication Engineers. 2010 | LMISTE, Life member of the Indian Society for Technical Education. Workshop & Seminar 2010 | Participated in the Workshop on Matlab and Simulink Toolboxes, St. Xavier’s College in association with Computer Society of India Kolkata Chapter,W.B, India 2011 | Presented paper in the National Conference on Computing and Systems 2010, Department of Computer Sc. Burdwan University, WB 2013 | Presented paper in the 48th Annual Convention of Computer Society of India, Vishakhapattanam Chapter, India 2013 | Participated in three day IEEE workshop on “VLSI, Embedded system & Modern Communication System Design Techniques" organized by dept of ECE, BITM, Santiniketan. 2015 | Coordinated and participated in the two day’s Faculty Development Program being organized at BITM, Santiniketan 2018 | Participated in Short Term Training Program on Hardware Simulation of Electrical and Electronic Circuits, NITTTR, Kolkata from 18/06/2018 to 29/06/2018

Non-volatile device is proposed in this article based on quantum-dot cellular automata architecture, which will be efficiently useful as a binary qubit system. In standards, today' theoretical researches are going on the volatile QCA gates, which are efficient well in performance towards the rapid b Non-volatile device architecture using quantum dot cellular automata Soudip Sinha Roy 1 || Anusua Chakraborty 2 Non-volatile device is proposed in this article based on quantum-dot cellular automata architecture, which will be efficiently useful as a binary qubit system. In standards, today's theoretical researches are going on the volatile QCA gates, which are efficient well in performance towards the rapid binary data computation. However, what if it can store some data for a while. ? Therefore, a novel methodology has been proposed theoretically towards the non-volatility of the QCA cells. As expected that this gate would be able to exhibit the non-volatility.

He has over five years of research experience in nanoelectronics. His research spaces are nanoelectronics, quantum physics, 2D nanomaterials, astrophysics, quantum gravity. Currently, he is the active member of IEEE, IEEE electron devices society, IEEE Nanotechnology Council and VLSI.

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Physics Tomorrow Material Science Letters (IF 0.98) publishes the quality research/review articles on material research and nanomaterials. To prepare your manuscript to visit the manuscript preparation page. Contact head.editor@wikipt.org Physics Tomorrow Material Science Letters ( PTMSL ) Word of the editor. | PTMSL is an open access international journal which covers the modern macro and micro-level material science research. This aims to provide a great opportunity to the lead researchers worldwide for publishing their valuable works at the lowest cost. Because I believe that publishing valuable knowledge is the best every award. Paper template .doc Cover letter templete .doc Contact- head.editor@wikipt.org See the publication honorarium Submit your manuscript Lets propose a special issue Submit to Vol. 3 A wormhole of light by using electronic materials Areena bhatti Department of Space Science, University of the Punjab, Download full text Read 16 August 2020 Cite this article Effect of Gd3+ ion concentration on photoluminescence and thermoluminescence studies of Y4Al2O9 phosphors Vikas Dubey et. al. DOI - 10.1490/ptl.dxdoi.com/5-65msci Download full text Read 08 January 2021 Cite this article Computational Analysis of Acetylene Generators used in Chhattisgarh State The Acetylene Generators using carbide as a source is used with oxygen cylinder extensively by Gas welders in Chhattisgarh state. They are mostly used for automobile body repairing work. These generators are used for producing acetylene gas at low pressure. Their construction and working looks identical but their capacity to hold the Acetylene gas is different. In this research paper with help of computational modeling of different popular Acetylene generators the capacity of each generator is calculated. The computational analysis will help to standardize the dimensions of the Acetylene generators for their safe working. Download full text Read 09 December 2020 Irreversible transformations of 3d lead(ii) Coordination polymers via mechanochemistry; Precursors for the preparation of lead(ii) chloride/bromide/sulfide nanoparticles ALI MORSALI1, VAHID SAFARIFARD2 TarbiatModares University, Tehran, Iran 28 March 2020 Cite this article Download full text Read