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PTedmemFatma_SARF | Physics Tomorrow | Bibliography. She is an editorial member of Physics Tomorrow Letters. Contact Fatma Ozutok Nationality: Turkish Marital Status : Married Educational Situation : 2000 - 2005 Selçuk University College of Education Physics teacher/Licence degree 2007 – 2009 Selçuk University Physics Department Physics/Graduate degree Thesis Title: Optical Phonon Modes in Quantum WellStructures (Advisor: Prof.Haluk Şafak) 2009 – 2016 Canakkale Onsekiz Mart University Physics Department Physics/PhD degree Thesis Title: Obtaining of Nanocomposites That Using Metal Oxide Thin Films with Metal and/or CarbonNanotube Modification for Sensor Applications (Advisor: Assoc.Prof. Sani Demiri) Language Proficiency: YOKDIL 70 (Level: Good writing and speaking Assignment : 2009- today: Canakkale Onsekiz Mart University Physics Department Research assistant 09.2015-02.2016: Aalto University NMG Department Visiting researcher 10.2017-02.2018 Istanbul Technical University Physics Engineering Short-term study 08.10.2018-today: Istanbul Technical University Materials Engineering FUK-2018-2613 project study Research Areas: 2009-2014 USP technique (Çanakkale Onsekiz Mart University Solid State Lab.) 2014-2016 Spin coating, CBD techniques (Çanakkale Onsekiz Mart University Material Lab.) 2015 FC-CVD Process (Aalto University NMG Lab.), Carbon nanotubes. 2009-2016 II-VI Metal Oxides (ZnO, ZnS etc.) and thin films. 2009-2016 Uv-Vis Spectroscopy (Çanakkale Onsekiz Mart University Material Lab.). 2013 Luminescence ( Universitat Wien, Short course, LuminescenceSpectroscopy). 2014 Luminescence (Ankara University, Nuclear Science Department, certified workshop). 2014-2016 Gas sensors, electrical properties (Gazi Univ., University Nano Lab.) Awards& Scholarships: 2014 Young Entrepreneur Contest, 1st prize. Celal Bayar University, Turkey. 2015 MEB-CIMO Research Scholarship at PhD level. Aalto University, Finland. Organization Responsibility: 2014 Workshop for high school science department teachers (Technician). Güzelyalı IDA KALE Hotel, Turkey. On-going Projects: 2018. Çanakkale Onsekiz Mart University, Council of Scientific Research Project (Grant Number: FUK-2018-2613) (Coordinator) Conferences: 2011 Poster, 7th Nanoscience and Nanotechnology Conference (NANOTR-VII), İstanbul/Turkey. 2011 Poster, International Symposium on Advanced Complex Inorganic Nanomaterials, Namur/Belgium. 2014 Poster, Solid State Meeting in IZTECH, İzmir/Turkey. 2014 Poster, UGHEK 2014, Eskişehir/Turkey. 2014 Poster, Solid State Meeting in Hacettepe University, Ankara/Turkey. 2015 Poster, NanoTR-11 in METU, Ankara/Turkey. 2016 Oral presentation, TFD 32. International Physics Congress, Muğla/Turkey. 2016 Poster, 18th National Optic, Electro-optic and Photonic Workshop, Ankara/Turkey. 2016 Poster, National CMP-22 Meeting, Ankara/Turkey. 2017 Poster, Solid State Meeting in IZTECH, İzmir/Turkey. 2017 Poster and oral presentation, 4th International Conference on Molecular Spectroscopy, Krakow/Poland. 2017 Oral presentation, ISCMP The International Congress of Materials and Polymers, Ohrid/Macedonia. 2019 Oral presentation, VI. Internatıonal Congress On Mathematıcs, Engıneerıng & Natural & Health Scıences, Adana/Turkey Publications : 2019 Sarf F., ‘Advanced Battery Applications of Thin Films’, SCIERA Journal of Materials, 4: 14-31. 2018 Sarf F. and Yakar E., ‘Investigation of ZnFe2O4 Films Depending on the Complex Agent Ratio’, Çanakkale Onsekiz Mart University Journal of Graduate School of Natural and Applied Sciences, 4(2):200-211. 2018. Özütok F. and etc.’ Enhancing the CO gas sensing properties of ZnO thin films with the decoration of MWCNTs’, Journal of Materials Science: Materials in Electronics (https://doi.org/10.1007/s10854-018-0288-2). 2018. Özütok F. and Yakar E., ‘Optical and Electrochemical Properties of PB-ZnO and PB-ZnO/MWCNT Nanocomposite Films Deposited by Chemical Bath’, Journal of New Materials for Electrochemical Systems, 21:119-126. 2018 Özütok F. and Yakar E., ‘Annealing Time Effect on the Optical Properties of Zn(O,OH,S) Films onto ZnO Seed Layer Under Un-vacuum Ambient, Sakarya University Journal of Science, 22(6):9 pages. DOI:10.16984/saufenblder.34975. 2018 Özütok F. and Yakar E., ‘Influence ofSulphur Concentration on the Optical Properties of ZnS Films onto ZnO Seed Layer Synhesized by Chemical Bath Deposition’, Journal of Applied Spectroscopy, (ZhPS) 85 (3):351. 2018 Özütok F. and etc., ‘Influence of Different Aluminum Source on the NH3 Gas Sensing Properties of ZnO Thin Films’, Journal of Electronic Materials, 47(5):2648-2657.(doi.org/10.1007/s11664-018-6099-7). 2017 Özütok F. and Demiri S., ‘Nanoflower-like ZnO Films Prepared by Modified Chemical Bath Deposition: Synthesis, Optical Properties and NO2 Gas Sensing Mechanism’, Digest Journal of Nanomaterials and Biostructures, 12, 309-317. 2016 Özütok F. and etc., "Electrochromıc NiO Thın Fılms Prepared bySpın Coatıng ", AIP Publsihing Conference Proceedings, no.1815, 050011. 2012 Özütok F. and etc., ‘Growth, Electrical, and Optical Study of ZnS:Mn Thin Films.’, ACTA PHYSICA POLONICA SERIES A 12120 (78). 2012 Özütok F. and etc., ‘Study of Ultrasonically Sprayed ZnO Films: Thermal Annealing Effect.’, ACTA PHYSICA POLONICA SERIES A 121(1) Completed Projects: 2016 Çanakkale Onsekiz Mart University, Council of Scientific Research Project (Grant Number: FDK-2015-470) (researcher) 2016 Çanakkale Onsekiz Mart University, Council of Scientific Research Project (Grant Number: FBA-2016-1051) (coordinator) 2017 Çanakkale Onsekiz Mart University, Council of Scientific Research Project (Grant Number: FBA-2017-1265) (Coordinator) 2017 Çanakkale Onsekiz Mart University, Council of Scientific Research Project (Grant Number: FBD-2017-1321) (researcher) Evaluated Papers: Material Science Research India: Phase formation and Morphological features of Calcium Copper titanate by modified Solid State Process, March 2019. Material Science Research India: Tensile and impact properties of composite blends based unsaturated polyester resin and vinyl ester with nata de coco fiber: Effect of various treatment on fiber, April 2019.

Applied Nanoelectronic Letters publishes the best quality articles under the micro and nano electronics field. Physics Tomorrow Applied Nanoelectronics Letters (AnEL) An SCOPUS-indexed monthly thrice peer-reviewed journal. Physics Tomorrow Applied Nanoelectronics Letters AnEL is an international thrice reviewed journal which publishes the novel research and review articles on every dimension of the electronics. The current impact factor is updating as this is newly launched journal. physical review a, applied physics letters. Word of the editor. | AnEL is an open access international journal which covers the recent trends of theoretical and experimental works on macro, micro and nanoelectronics. This aims to provide a great opportunity to the leading researchers worldwidely for publishing their valuable works at no or minimum honorarium. NO PUBLICATION CHARGE CURRENTLY. Submit your paper at ptlsubmission@gmail.com OR click here to submit Submit your manuscript See the publication honorarium AneL contains a collection of papers in the subfields of scanning probe microscopy, nanofabrication, functional nanoparticles and nanomaterials, molecular engineering, nano device fabrication and bionanotechnology. Written by experts in their respective fields, it is intended for a general scientific readership who may be non-specialists in these subjects, but who want a reasonably comprehensive introduction to them. This volume is also suitable as resource material for a senior undergraduate or introductory graduate course in nanoscience and nanotechnology. Contents: Scanning Probe Techniques: Scanning Probe Microscopy Based Nanoscale Patterning and Fabrication Nanoscale Characterization by Scanning Tunneling Microscopy Nanofabrication: EUV Lithography for Semiconductor Manufacturing and Nanofabrication Synchrotron-Radiation-Supported High-Aspect-Ratio Nanofabrication Functional Nanomaterials: Chemical Interactions at Noble Metal Nanoparticle Surfaces — Catalysis, Sensors and Devices Diamond-Like Carbon: A New Material Base for Nanoarchitectures Hotplate Technique for Nanomaterials Molecular Engineering: π-d Interaction Based Molecular Conducting Magnets: How to Increase the Effects of the π-d Interaction Recent Developments on Porphyrin Assemblies Bionanotechnology and Nanomedicine: Nanostructures from Designer Peptides Nanotechnology and Human Diseases Nanomedicine: Nanoparticles of Biodegradable Polymers for Cancer Diagnosis and Treatment

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Dark Core: A New Finding about the Mystery of Gravity. This paper explains a mysterious fact about Gravity which has been discovered after 11 years of research. Gravity is not the way Newton, Einstein or other physicists have thought over the years.

Physics Tomorrow Theoretical Physics Letters TPL is an international thrice reviewed journal which publishes the novel research and review articles on every dimension of the physics. The current impact factor is 1.4 as per 2019 update. Physics Tomorrow Theoretical, Experimental and Observational Physics Letters (PTEL) (Impact factor 1.4) (Dec. 2019 record) Basic information Home Support About Email Word of the editor. | PTEL is an open access international journal which covers the recent trends of theoretical, experimental and observational physics. This aims to provide a great opportunity to the lead researchers worldwide for publishing their valuable works at a minimum honorarium. Because I believe that great ideas are priceless. Submit your paper at ptlsubmission@gmail.com For further information visit wikipt.org/ptl Paper template .doc Cover letter templete .doc March 2020 volume 6 Submit your manucript Online submssion Email submission Impact factors Manuscript preparation Join as Editor Reviewer See the publication honorarium Submit your manuscript Lets propose a special issue Open volume 4 Read Priprints release Extended indexing Science Citation (SCI) Scopus Submission is open Website is designed simply. Get anything from the search bar. PTL does not have any last submission date. We accept submissions always. Non-volatile device architecture using quantum-dot cellular automata Soudip Sinha Roy1 Theoretical Physicist Director at Physics Tomorrow soudipsinharoy@{gmail.com;physicist.net} Tel.: +91 8327656228 Anusua Chakraborty2 RBU Kolkata Anusuachakraborty2016@gmail.com Keys: quantum dot; non-volatile memory; resistive memory; nano-crystal device; nanolectronics. Download full text Read 24 March 2020 Cite this article PTL fellowship Best paper award Research sponsorship June submissions will be eligible for award and fellowship. Get is published earlier to apply for it later. 24 March 2020 Cite this article Download full text Read The True Nature of Matter (A new theory about the atomic structure of the electron and Dark Matter) Robert A. Smith 7 Taylor Way, Warwick Gates, Warwick CV34 7BJ robert1smith333@btinternet.com Keys: Electron; Dark Matter; Negative mass; Repulsive Gravity; Young’s Slit experiment.

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Fabrication of Non-volatile Charge Storage Memory Device by Novel doped ZnO nanoparticles with 4.79 eV bandgap. SOUDIP SINHA ROY Theoretical Physicist Quantumorbit Synthesis Pvt. Ltd., India soudipsinharoy@(gmail.com, physicist.net) Fabrication of Non-volatile Charge Storage Memory Device by Novel doped ZnO nanoparticles with 4.79 eV bandgap SOUDIP SINHA ROY Theoretical Physicist Quantumorbit Synthesis Pvt. Ltd., India soudipsinharoy@(gmail.com, physicist.net) Full text Abstract N owadays, the drastic participation of the nanosized materials in technology have been implicated with various applications which mainly aims the performance optimization, dimensional downscaling , ultra-low power consumption etc. to overcome the fundamental limits of the microscale devices. It is the requisite stage to familiarize a convenient alternative of the traditional large-scale technologies in the purpose of accelerating the flow of the applied science for mankind. This article presents two novel non-volatile device structures which are fabricated by layer by a layer deposition method. I-V measurements for both the samples justify the device characteristic as p-type –insulator–n-type configuration. The measurements confirm that the successful fabrication of those devices and proves the high-density charge capacity with an improved lifetime of the carriers compared to erstwhile reports. The measured the threshold voltage for this device is 0.939V. Diode characteristic of the fabricated device Keys: Zinc oxide, charge storage devices, quantum physics, nanotechnology 1. Introduction To unfold the hidden mysteries of the molecules and their applications the nanoscience have been presented plenty of its morphism in order to rapid performance scale up with drastic dimensional down scaling . Manipulation of the molecular information technology has numerous existing approaches for instance molecular non-volatile memory , electron spin devices, nano- memorister , quantum dot island based devices, capacitive devices etc. which have proven their superior activities in binary logic and storage device applications. Nowadays, the utility of the hard storage has become quite crucial and instantaneous which claims to be tinier and fastest to meet the present requirements of the mankind . The fabrication of the non-volatile charge storage devices opens a convenient way with millions charge storing capacity in a few nanometer areas . In this letter the ZnO nanoparticle-based non-volatile memory device has reported which provides a better optimization to the device efficiency. To fabricate this device three major materials have involved those are PMMA, Ag NPs, ZnO NPs. In another type of the device is fabricated by using Nafion which exhibits a benchmarking of the p- i-n diode. The PMMA layer is used as the tunneling barrier for the electrons that provides a path to the electrons to be tunnelled during the biasing application but resistance during cutoff state. It also acts as the high impedance to the electrons during cutoff state that resists from the discharging by defending the reverse tunnelling . To fabricate this device the ZnO and Ag doped ZnO NPs are utilized and specifically sputtered on the surface of the ITO. Two different types of devices have been walked through firstly ITO/PMMA/Nafion has been examined and next is ITO/PMMA /ZnO-NPs doped with Ag NPs. The reduced bandgap of the doped ZnO layer works as the electron hopping state and allows to operate it at ultra-low power input. 2. Background of Non-volatile Memory Devices Since the last twenty years of the 19th century, the advancement of the nanotechnology has bequeathed a lot of novel applications to the current technology to accelerate its current flow over its fundamental limits. The molecular technology has eliminated various complications in the device fabrication and operation for instance impurity inconsistency, thermal carrier diffusion, elevated outlay of photolithography etc. which genuinely overcomes the unwanted faults in circuit and strictly shrinks the number of superposition states. In the recently published article it is reported that [1,2] the tunneling current depends on the barrier resistivity which tunneling get violated dynamically due to the operating temperature variation. Therefore, the temperature stability is also a key point which rights to be high to opt the ultimate device performance. The synthesis of the non-volatile memory devices through the molecular thin film technology has already been taken care of before a couple of years. The floating gate MOS devices also acceptable performances in charge storing but those have the less storage density and lower speed of operation. The involvement of the nanoparticles induce a high surface area with the wide bandgap that imposes to store high density data and optimized operating speed with ultralow power consumption and minute faults.exhibits between the ITO and the Ag NPs layer. Another report communicates that the structure ITO/a-C/ZnO/a-C/Al contact also exhibits very high optimization in switching rate and the charge storage capability where two a-C has incorporated which acts ITO/PMMA/Ag NPs based device has already been reported previously which exhibits superior performance adaptability [2]. The ON/OFF ratio (switching rate) has also improved drastically due to the incorporation of the PMMA layer as a typical insulator [1]. 3. Preparation of respective nanoparticles The following nanoparticles are used in the device fabrication process. The process of synthesis of that nanomaterial is very easy, cheaper and time efficient. The involved chemicals have easy commercial availability. The list of chemicals is as follows. Sodium Borohydrate (NaBH4); AgNO3; PVP; Zinc Acetate-dihydrate (Zn(COOCH3)2.2H2O); Isopropyl Alcohol (CH3CH2CH2OH); Ethanolamine (C2H7NO). 3.1. ZnO NP preperation method As a precursor commercially available Zinc Acetate-dihydrate (Zn(COOCH3)2.2H2O) salt was used and dissolved into Isopropyl Alcohol ( CH3 CH2 CH2 OH ) having molar mass 60.09 g/mol. The final obtained solution was 0.5M. Afterwards, the solution was put in stirring and the Ethanolamine (C2H7NO) was added drop-wise during stirring at constant 80 C temperature until the gel is formed. After obtaining the gel the sample was dried at 35C until the solvent is completely evaporated out. However, the organic solvent evaporates faster in rate even at room temperature. 3.2. Ag NP preparation method With the 60ml of distill water, the 0.004M NaBH4 was dissolved and kept for 30 min at continuous stirring in an ice bath. During stirring gently add 4ml of 0.002M AgNO3 dropwise until the colour of the solution is converted into light yellow. Once the desired colour is achieved 0.3% PVP as the capping agent was gently added. Afterwards, store the prepared solution immediately in dark space to avoid the particle agglomeration. 3.3. Ag-doped ZnO nanopowder preperation method As a precursor commercially available Zinc Acetate-dihydrate (Zn(COOCH3)2.2H2O) salt was used and dissolved into Isopropyl Alcohol ( CH3 CH2 CH2 OH ) having molar mass 60.09 g/mol. The final obtained solution was 0.5M. Afterwards, the solution was put in stirring and the Ethanolamine (C2H7 NO) was added drop-wise during stirring at constant 80 C temperature until the gel is formed. After the ZnO gel formation, the 5% concentric AgNO3 was added dropwise while stirring at 6000 rpm inside an ice bath. Once the doping is successful then by centrifuging the sample and washing by MEA several times bright white coloured Ag-doped ZnO nanopowder was obtained. Figure 1 | (a) UV-vis measurement for the pure ZnO NPs (50nm), (b) Zoomed view for further clarification As the UV visible optical bandgap approximation asserts that B.G.= 1240/lamda eV. Therefore, the calculate B.G. of this above ZnO sample is given by 1240/258.40= 4.79 eV. The bandgap for a pure ZnO nanoparticle is at around ~3.2eV which response to 380nm UV wavelength. But in this case the bandgap is found with an unexpected increment which responded at 258.40 nm UV wavelength. In the next context this reason will be revealed out. Research is going on, on this topic. 4. Device Fabrication The fabrication is the ultimate step for providing a physical aspect to any theoretical substance. In this case, two different types of devices have been fabricated fig. 2 is the ITO/PMMA/ZnO NPs based device. This device operates with the basic fundamental process of the charge trapping and hopping states. But the second device fig. 3 operates with the reduced bandgap of the ZnO through Ag doping and results in the ultra-low power operating with optimized ON/OFF ratio. 4.1. ITO/PMMA/Naffion structured device The chemical formula of the nafion is C7HF13O5SC2F4·. Initially, the ITO was repeatedly cleaned by the concentric ethanol and the acetone in the ultrasonicator then it was dried at an hour at room temperature. After that, the ITO was exposed to the PMMA by a suitable spin coater and kept for 24 hrs. at room temperature for drying purpose. The grown thickness in 40nm. Once the drying is completed then highly purified nafion was drop casted onto the dried PMMA surface of the ITO and dried for 24 hrs. at room temperature. Figure 2 | ITO/PMMA/Nafion structured device 4.2. ITO/PMMA/Ag-doped ZnO device The fabrication process Initially, the ITO was repeatedly cleaned by the concentric ethanol and the acetone in the ultrasonicator then it was dried at an hour at room temperature. After that, the ITO was exposed to the PMMA and kept for 24 hrs. at room temp. for drying purpose. Once the drying is completed then the pre-synthesized Ag-doped ZnO nanopowder was diluted into the 2 propanols and was sputtered onto the dried PMMA surface of the ITO and 100 nm thicker thin film was produced. After that, the sample was kept at vacuum for 48 hrs in special purpose. Figure 3 | ITO/PMMA/Ag NPs/Ag-doped ZnO structured device 5. Performance Justification Through I-V and C-V Measurement 5.1. I-V measurement of the naffion based device. I-V measurement is the technique which allows to investigate the current verses voltage mapping for any multipolar device. In this case both the fabricated devices are the bipolar systems those are verified through I-V measurements. Figure 4| I-V measurement curve for the ITO/PMMA/Nafion based device From above graph figure 4, it is well visible that the curve is similar to the semiconductor diode where the electrons forward current is 2.39889e-9 A. The current is high compared to the previously reported devices [2]. This high current stands for the high probability of the electrons to be found in the conduction band of the Nafion. Once the electrons are subjected to the electromotive field then gradually those try to overcome the PMMA barrier interface (thickness 250nm) and after a certain voltage, the tunneling phenomena of the electrons are observed which is clear from the fig. 3. Within the potential range of 0.831V to 0.939V there has a transition of the electron which gives a small valley peak that satisfies the electron tunneling effect through the thin PMMA film. The upper valley provides 1.422e-9 A current which instantly falls down at 1.4444e-10 A. From 0.939V this device exhibits the standard diode characteristics. Therefore, the threshold voltage for this device is 0.939V. The measurement from -2V to +2V assures that this diode characteristic is well justified and meet with the standard semiconductor devices. 5.2. C-V measurement of the Nafion based device Cyclic voltammetry measurement for the nafion based sample. Keeping K+ ions in the solution the CV measurement was performed. Figure 5| I-V measurement curve for the ITO/PMMA/Nafion based device with the I-V four-probe measurement system Figure 6| C-V measurement curve for the ITO/PMMA/Nafion based device According to the C-V analysis if the device is fully reversible then obviously ipa/ipc should be equal to 1. But in this case this ration deviates from one by the factor of 4.3170. The anodic current IPA is 0.000351429A and the cathodic current is 0.00151714A. In case of forward cycle, the current is comparatively high to the reverse cycle. Therefore, it is identified that this device is having a non-volatility nature. This non-volatile nature is in form of charge shoring capacity. The specified interval between two cycles forward and reverse is 2sec. 5.3. I-V measurement of the Ag-doped ZnO based device. Figure 7| I-V measurement curve for the ITO/PMMA/Ag-doped ZnO NPs based device From this measurement curve figure 7, it is seen that that curve is following the standard p- i-n characteristics. The incorporation of the intermediate insulating layer differs the device from the general p-n diode semiconductors where the p-type and the n-type semiconductors are attached and separated by the self-induced insulating layer called the depletion layer. But when this depletion layer is mask fabricated then the device characteristics changes to the p- i-n characteristics where the electron tunneling takes place through the insulating layer. Depending on the thickness of the tunneling barrier tunneling current varies and gives a search tunneling current which typically provides an oscillation as shown in figure 8. According to the measurement curve , the maximum stable current output is obtained at 3.984V is 3.2e-5 A. The measured threshold voltage for this device is 0.339V. The full frame of the graph is shown below, where the highlighted part of the graph is having a noise like phenomena which is mostly caused by the unwanted and uncontrolled electron tunneling within the applied potential range, figure 8. Figure 8| Complete curve of I-V measurement curve for the ITO/PMMA/Ag-doped ZnO NPs based device. 6. Conclusion This work is performed for fabricating the non-volatile devices based on ZnO and metal-doped ZnO nanoparticles. In collaboration with the four probe I-V characteristics measurement, the devices have proven that both are having a non-volatile nature and the those are having very less threshold voltage which can trigger device at very low power. The improvement in the charge storage capacity is notable in both the devices. The unexpected bandgap for the ZnO is being verified through several observations and experiments. In the future articles, this may come across. References [1] Fushan Li, et.al. , "Nonvolatile Memory Effects of ZnO Nanoparticles Embedded in an Amorphous Carbon Layer", Japanese Journal of Applied Physics 49 (2010) 070209. [2] Biswanath Mukherjee and Moumita Mukherjee, "Nonvolatile memory device based on Ag nanoparticle: Characteristics improvement" Applied Physics Letters 94, 173510 (2009); doi : 10.1063/1.3127233. [3] V. L. Covin, M. C. Schlamp, and A. P. Alivisatos: Nature (London) 370 (1994) 354. [4] T. Homma, T. Kutsuzawa, K. Kunimune, and Y. 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