To unfold the hidden mysteries of the molecules and their applications the nanoscience have been presented plenty of its morphism in order to rapid performance scale up with drastic dimensional down scaling. Manipulation of the molecular information technology has numerous existing approaches for instance molecular non-volatile memory, electron spin devices, nano-memorister, quantum dot island based devices, capacitive devices etc. which have proven their superior activities in binary logic and storage device applications. Nowadays, the utility of the hard storage has become quite crucial and instantaneous which claims to be tinier and fastest to meet the present requirements of the mankind. The fabrication of the non-volatile charge storage devices opens a convenient way with millions charge storing capacity in a few nanometer areas. In this letter the ZnO nanoparticle-based non-volatile memory device has reported which provides a better optimization to the device efficiency. To fabricate this device three major materials have involved those are PMMA, Ag NPs, ZnO NPs. In another type of the device is fabricated by using Nafion which exhibits a benchmarking of the p-i-n diode. The PMMA layer is used as the tunneling barrier for the electrons that provides a path to the electrons to be tunnelled during the biasing application but resistance during cutoff state. It also acts as the high impedance to the electrons during cutoff state that resists from the discharging by defending the reverse tunnelling. To fabricate this device the ZnO and Ag doped ZnO NPs are utilized and specifically sputtered on the surface of the ITO. Two different types of devices have been walked through firstly ITO/PMMA/Nafion has been examined and next is ITO/PMMA /ZnO-NPs doped with Ag NPs. The reduced bandgap of the doped ZnO layer works as the electron hopping state and allows to operate it at ultra-low power input.